Download 5th FORUM ON NEW MATERIALS PART C Proceedings of the 5th by Edited by Pietro VINCENZINI World Academy of Ceramics and PDF

By Edited by Pietro VINCENZINI World Academy of Ceramics and National Research Council, Italy Co-edited by Kunihito KOUMOTO, Nagoya University, Japan Nicola ROMEO, University of Parma,

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Extra resources for 5th FORUM ON NEW MATERIALS PART C Proceedings of the 5th Forum on New Materials, part of CIMTEC 2010-12 th International Ceramics Congress and 5th Forum on New Materials Montecatini Terme, Italy, June 13-18, 2010

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Then S increases according to Mott’s theory [13], which suggests that the value of S is proportional to the slope of the density of state at Fermi level. For the Sb-substituted Fe2VAl system, electrons can be injected because the number of valence electrons of Sb is larger than that of Al. Consequently, the rigid band-like shift of the Fermi level by the electron injection resulting from the Sb substitution can contribute to the enhancement of the negative S value. 03, the valence electron density is reduced because the number of valence electrons of Ti is lower than that of V.

The second step in this synthesis procedure is to determine the deposition time at these ratios that correspond to integral unit cells of Bi2Te3, TiTe2 and Sb2Te3 respectively. 49 Å layer of TiTe2. To calibrate the Bi-Te repeat thickness, samples were deposited holding the number of Ti-Te and Sb-Te layers within the repeating unit constant at 3 while systematically varying the number of Bi-Te repeats from 2-6, resulting in five multilayers with increasing multilayer period thickness. The resulting systematic change in the multilayer repeat thickness was used to determine the thickness of one Bi-Te layer by linear regression.

Measurements of the electrical conductivity  and the Seebeck coefficient S were performed in the temperature range of 300–900 K. Hall measurements were conducted at room temperature by applying an external magnetic field of 1 T by a van der Pauw’s method. The Hall carrier concentration n was determined from the Hall coefficient RH using the relation RH =1/en, where e is the electron charge. The Hall mobility  was determined from the electrical conductivity  and the Hall coefficient RH using the relation = H.

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